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| savantic semiconductor product specification silicon npn power transistors BD311 d escription with to-3 package high dc current gain excellent safe operating area complement to type bd312 applications designed for power amplifier applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current(peak) 20 a i b base current 4 a p t total power dissipation t c =25 115 w t j junction temperature -65~200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.52 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BD311 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ; i b =0 60 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 1.0 v v besat base-emitter saturation voltage i c =5a ;i b =0.5a 1.8 v v be base-emitter on voltage i c =5a ;v ce =4v 1.5 v i cbo collector cut-off current v cb =rated;i e =0 1.0 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc current gain i c =5a ; v ce =4v 25 h fe-2 dc current gain i c =10a ; v ce =4v 5 f t transition frequency i c =0.5a ; v ce =10v,f=1mhz 4 mhz savantic semiconductor product specification 3 silicon npn power transistors BD311 package outline fig.2 outline dimensions |
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